Microelectronic capacitor structure compatible with copper containing microelectronic conductor layer processing

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United States of America Patent

PATENT NO 6466427
SERIAL NO

09584807

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Abstract

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A method for fabricating a capacitor, and a capacitor fabricated employing the method. To practice the method, there is first provided a substrate. In accord with a first embodiment, there is then formed over the substrate a first capacitor electrode plate formed of a first copper containing conductor material. There is then formed upon the first capacitor electrode plate a first barrier layer. There is then formed upon the first barrier layer a capacitor dielectric layer. There is then formed upon the capacitor dielectric layer a second barrier layer. Finally, there is then formed upon the second barrier layer a second capacitor electrode plate formed of a second copper containing conductor material. The method contemplates a capacitor fabricated employing the method. In accord with a second embodiment, a capacitor dielectric material from which is formed the capacitor dielectric layer is not derived from a barrier material from which is formed the first barrier layer. The capacitors provide enhanced thermal interdiffusion stability and enhanced oxidation stability.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Sheng-Hsiung Tai Chung, TW 141 829

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