Anodically bonded, gas impervious cavity structures fabricated in silicon
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United States of America Patent
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Oct 22, 2002
Issued Date -
N/A
app pub date -
Oct 23, 2000
filing date -
Sep 8, 1998
priority date (Note) -
Expired
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Abstract
Glass with metal deposited on it in a pattern which is slightly larger than the cavity area of the corresponding silicon wafer. The metal layer has a thickness such that the glass can deform sufficiently to allow bonding of the glass to the silicon. The metal is then compressively bonded to the silicon in a rim area around the edge of the cavity. The metal provides a barrier to helium which can leak through the glass, but is stopped by the metal barrier.
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