Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
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United States of America Patent
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Oct 22, 2002
Grant Date -
Mar 7, 2002
app pub date -
Jul 10, 2001
filing date -
Jul 10, 2000
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Abstract
GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.
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