Method of forming silicon-contained crystal thin film
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United States of America Patent
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Oct 22, 2002
Grant Date -
Sep 6, 2001
app pub date -
Jan 19, 2001
filing date -
Jan 21, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.
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