Semiconductor device and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Oct 22, 2002
Issued Date -
N/A
app pub date -
Jan 12, 2001
filing date -
Jan 14, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film is composed of a first portion disposed on a side wall portion of the trench and a second portion disposed on upper and bottom portions of the trench. The first portion is composed of a first oxide film, a nitride film, and a second oxide film. The second portion is composed of only an oxide film and has a thickness thicker than that of the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be mitigated, and a decrease in withstand voltage at that portions can be prevented.
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