Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
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United States of America Patent
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Oct 22, 2002
Grant Date -
Sep 5, 2002
app pub date -
Mar 5, 2001
filing date -
Mar 5, 2001
priority date (Note) -
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Abstract
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
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