Flash memory device capable of preventing program disturb and method for programming the same
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United States of America Patent
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Oct 22, 2002
Grant Date -
May 23, 2002
app pub date -
Sep 13, 2001
filing date -
Nov 22, 2000
priority date (Note) -
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Abstract
Disclosed is a method for programming a non-volatile semiconductor memory device that avoids the program disturb problem. In the programming method, ground voltage is applied to a first bit line corresponding to a memory cell to be programmed, and power supply voltage is applied to a second bit line corresponding to a memory cell to be prevented from being programmed. Next, a program voltage is applied to a word line connected to the memory cell to be programmed. The program voltage is stepped up to a desired voltage level of each program cycle from the first voltage thereby to reduce coupling between selected and non-selected bit and word lines.
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