Method for forming an interlayer insulating film, and semiconductor device
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United States of America Patent
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Oct 29, 2002
Grant Date -
N/A
app pub date -
May 17, 2000
filing date -
Jun 9, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming an interlayer insulating film includes the steps of: forming a metal film on a substrate; forming a first insulating film on the metal film; patterning the first insulating film by selectively etching the first insulating film; patterning the metal film by etching the metal film using the patterned first insulating film as a mask; forming an overhang portion of the first insulating film on the metal film by selectively etching a side portion of the metal film; and forming a second insulating film on the entire structure.
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