Film forming method, semiconductor device manufacturing method, and semiconductor device
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United States of America Patent
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Oct 29, 2002
Grant Date -
Nov 15, 2001
app pub date -
Apr 3, 2001
filing date -
Apr 7, 2000
priority date (Note) -
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Abstract
There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si--R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H.sub.2.
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