Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus
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United States of America Patent
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Oct 29, 2002
Grant Date -
Jul 5, 2001
app pub date -
Feb 21, 2001
filing date -
Aug 21, 1997
priority date (Note) -
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Abstract
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.
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