Gas dispersion head
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United States of America Patent
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Nov 5, 2002
Grant Date -
N/A
app pub date -
Sep 20, 1999
filing date -
Sep 20, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor processing system includes a reactor and a dispersion head within the reactor. During use, process gas is supplied to the dispersion head. The process gas flows through distributors of the dispersion head and into the reactor. The process gas contacts substrates in the reactor thus forming a layer on the substrate. Use of the dispersion head reduces and/or eliminates turbulence and recirculation in the flow of the process gas through the reactor. This results in the formation of layers on the substrates having excellent thickness uniformity. This also allows realization of an abrupt transition between layers formed on the substrates.
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