Polysilicon thin film transistor and method of manufacturing the same
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United States of America Patent
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Nov 5, 2002
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app pub date -
May 19, 2000
filing date -
May 20, 1999
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Abstract
The present invention discloses a method of manufacturing a thin film transistor for use in a liquid crystal display device in which includes crystallizing an amorphous silicon layer formed over a substrate using a first SLS (sequential lateral solidification) laser annealing technique to form a polysilicon layer; forming sequentially a gate insulating layer and a gate electrode on the polysilicon layer; ion-doping the polysilicon layer using the gate electrode as a mask to form source and drain regions; and activating the gate electrode and the source and drain regions using a second SLS laser annealing technique. The gate electrode comprises an amorphous silicon.
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