Method of forming noble metal pattern
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United States of America Patent
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Nov 5, 2002
Grant Date -
N/A
app pub date -
Aug 16, 2000
filing date -
Aug 16, 2000
priority date (Note) -
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Abstract
A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed. A layer of noble metal, which will form an upper electrode of a capacitor, is formed over a dielectric layer. A mask layer is then formed over the noble metal layer and patterned to leave a portion of the noble metal layer exposed. The portion of the exposed noble metal is subsequently converted to its silicide, the noble metal silicide is then etched and the dielectric layer is removed, leaving the noble metal layer patterned in an upper electrode of an IC capacitor.
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