A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means 30 for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means 30; condensing means 40 for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means 50 for detecting the infrared radiation condensed by the infrared radiation condensing means 40, and analyzing means 60 for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.
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