Field emission device
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United States of America Patent
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Nov 5, 2002
Grant Date -
N/A
app pub date -
Mar 2, 2000
filing date -
Jul 3, 1998
priority date (Note) -
Expired
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Abstract
A field-emission device includes at least one plane cathode made of conductive material with a low electron affinity located on a face of a substrate carrying a layer of a dielectric material, which layer has at least one cavity in which the cathode is located. A gate made of conductive material is located on the dielectric layer and has an aperture centered with respect to the cavity. The conductive material with a low electron affinity is a material deposited in amorphous form. Such a device may find particular application to electron guns or display devices.
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