Plasma chamber support having dual electrodes
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United States of America Patent
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Nov 12, 2002
Grant Date -
N/A
app pub date -
Mar 7, 2000
filing date -
Mar 7, 2000
priority date (Note) -
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Abstract
A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.
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