Method of manufacturing a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Nov 12, 2002
Issued Date -
N/A
app pub date -
Mar 21, 2000
filing date -
Mar 3, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.
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