Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
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United States of America Patent
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Nov 12, 2002
Grant Date -
May 9, 2002
app pub date -
Nov 5, 2001
filing date -
Oct 12, 2000
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Abstract
A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH.sub.2 NH.sub.2).sub.n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.
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