Semiconductor device and method of manufacturing the same
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United States of America Patent
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Nov 12, 2002
Grant Date -
Dec 13, 2001
app pub date -
Apr 30, 2001
filing date -
May 18, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si--O--Si bond and one oxygen-containing gas selected from the group consisting of N.sub.2 O, H.sub.2 O, and CO.sub.2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.
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