Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
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United States of America Patent
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Nov 12, 2002
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N/A
app pub date -
May 9, 2000
filing date -
Oct 21, 1997
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Abstract
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
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