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Abstract

A method for extracting the capacitance value associated with a PN junction along the well-substrate interface for use in modeling the substrate. The method includes receiving the 2-D or 1-D mesh doping profile. The method includes finding a junction curve or transition region that represents the transition between the well and the substrate bulk. The method further includes finding a set of parameters .alpha.,.beta. and .gamma. to characterize the junction at a point or a vertical discretization along the transition. During modeling, the set of parameters .alpha., .beta. and .gamma. is then employed, along with the input bias voltage value, to calculate the thickness of the depletion region, which is in turn employed to calculate the capacitance for the well-substrate junction. The capacitance calculated is then employed to more accurately model the junction, which leads to a more accurate model for the substrate.

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First Claim