Method for fabricating a bipolar semiconductor device
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United States of America Patent
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Nov 19, 2002
Issued Date -
N/A
app pub date -
Apr 21, 1999
filing date -
May 2, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth retarding layer and has an inclined portion formed over an edge portion of the epitaxial growth retarding layer, forming a base layer having an inclined portion on the collector layer, and forming an emitter layer on the inclined portion of the base layer.
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