Systems, methods and computer program products for obtaining an effective pattern density of a layer in an integrated circuit, and for simulating a chemical-mechanical polishing process using the same
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United States of America Patent
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Nov 19, 2002
Grant Date -
N/A
app pub date -
Jun 20, 2000
filing date -
Jun 21, 1999
priority date (Note) -
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Abstract
Embodiments of the present invention can provide systems, methods and/or computer program products that can obtain an effective pattern density of a layer of an integrated circuit from layout data that defines the layout. A grid of pattern cells is defined for the layout data. A respective pattern density is determined for a respective the pattern cell in the grid. An effective pattern density is calculated for a first pattern cell in the grid. The effective pattern density for the first pattern cell is a function of the pattern density of at least second pattern cell in the grid that is remote from (i.e. nonadjacent) the first pattern cell, and a distance of the at least a second pattern cell from the first pattern cell. Adjacent cells also may be included, and preferably are included, in the effective pattern density.
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