Diode structure, especially for thin-film solar cells
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United States of America Patent
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Nov 26, 2002
Grant Date -
Apr 18, 2002
app pub date -
Jul 25, 2001
filing date -
Nov 25, 1999
priority date (Note) -
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Abstract
The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.
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