Semiconductor radiation detector and manufacture thereof
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United States of America Patent
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Nov 26, 2002
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N/A
app pub date -
Dec 16, 1999
filing date -
Dec 22, 1998
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Abstract
The semiconductor radiation detector has a low leakage current, high radiation detecting efficiency and low cost. A high-density impurity layer of the detector is formed at least on one surface of a semiconductor crystal wafer beforehand. A crystal of a size required for forming the detector is diced from the wafer and the diced surfaces of the crystal have a mirror finished surface. A passivation film is formed on the diced surfaces of the crystal immediately after polishing.
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