Integration of anodized metal capacitors and high temperature deposition capacitors
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United States of America Patent
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Nov 26, 2002
Grant Date -
N/A
app pub date -
Oct 16, 2000
filing date -
Oct 16, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An integrated passive component device in which an anodized metal capacitor and a HTD capacitor are fabricated with a protective conductive metal layer disposed between the dielectric layer of the anodized metal capacitor and the dielectric layer of the HTD capacitor. The protective conductive metal layer helps to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the dielectric layer of the anodized metal capacitor. The anodized metal capacitor and the high temperature deposition capacitor are fabricated on the same substrate using only one masking operation.
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