Method of manufacturing a semiconductor device
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United States of America Patent
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Dec 3, 2002
Issued Date -
N/A
app pub date -
May 30, 2001
filing date -
Jun 2, 2000
priority date (Note) -
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Abstract
A first insulating layer is embedded within a semiconductor film formed on a base insulating film, a second insulating layer is formed on a portion of the semiconductor film, and a laser beam is irradiated from the top side (or from both the top side and the bottom side) of the substrate. A thermal gradient develops in the semiconductor film due to the thermal insulating effect of the base insulating film, due to the thermal insulating effect of the first insulating layer, and due to the antireflection effect and thermal insulating effect of the second insulating layer. The location and direction of lateral growth of crystal nuclei are controlled by utilizing these effects, and large size crystal grains can be obtained.
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