Method for engineering the threshold voltage of a device using buried wells
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United States of America Patent
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Dec 3, 2002
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N/A
app pub date -
May 31, 2001
filing date -
May 31, 2001
priority date (Note) -
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Abstract
Buried platform wells are specifically used to electrically interact with the platform transistors of the invention. The dopant concentration distribution of the buried platform wells is used to change the threshold voltage of the platform transistors of the invention by introducing a tail dopant concentration into the active region of the platform transistors. The platform transistors of the invention can also be used in conjunction with standard transistors, on a single structure, to provide both low and relatively high threshold voltage transistors on a single structure. Consequently, using the method and structure of the invention, considerable versatility and design flexibility are achieved with minimum additional structural complexity.
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