Method of forming a metal seed layer for subsequent plating
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United States of America Patent
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Dec 3, 2002
Issued Date -
N/A
app pub date -
Jan 4, 2001
filing date -
Apr 5, 1999
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Abstract
A method of forming a metal seed layer, preferably a copper layer, for subsequent electrochemical deposition. The metal seed layer is formed by the oxidation-reduction reaction of a metal salt with a reducing agent present in a layer on the substrate to be plated. Metal interconnects for semiconductor devices may be produced by the method, which has the advantage of forming the metal seed layer by a simple electrochemical plating process that may be combined with the plating of the interconnect itself as a single-bath operation.
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