Programming and erasing methods for a reference cell of an NROM array
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United States of America Patent
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Dec 3, 2002
Grant Date -
Dec 6, 2001
app pub date -
Apr 5, 2001
filing date -
May 4, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for programming a reference cell of a memory array includes the steps of programming the reference cell with large programming steps until a threshold voltage level of the reference cell is above an interim target level and programming said reference cell with small programming steps until the threshold voltage level is above a final target level.
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