Dry etching device
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United States of America Patent
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Dec 10, 2002
Grant Date -
Apr 18, 2002
app pub date -
Jul 9, 2001
filing date -
Jul 11, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
It is an object of the present invention to provide an upper electrode which is prevented from being contaminated with an impurity, has a sufficient adhesive strength between the pedestal and electrode plate of silicon, secures high-precision parallelism with the lower electrode, and hence improves the etching characteristics and silicon wafer yield. It is another object of the present invention to provide a dry etching device equipped with the upper electrode. The present invention provides an upper electrode for dry etching devices, comprising an electrode plate of silicon which is supported by a pedestal, wherein (a) the pedestal is made of graphite, and (b) the electrode plate of silicon is joined to the pedestal by an organic adhesive containing a filler having a Young's modulus of 6.times.10.sup.9 to 68.times.10.sup.9 N/m.sup.2.
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