Method of making a Schottky diode in an integrated circuit
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United States of America Patent
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Dec 10, 2002
Issued Date -
N/A
app pub date -
Sep 11, 1998
filing date -
May 13, 1996
priority date (Note) -
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Abstract
A method of forming an integrated circuit including a Schottky diode includes providing a substrate of a first conductivity type, defining a region of a second conductivity type relative to the substrate and forming an insulator over the second conductivity type region. The method also includes removing an area of the insulator for definition of a contact hole, and removing an area encircling the contact hole and forming highly doped regions of the second conductivity type in second conductivity type regions encircling the contact hole. The method further includes depositing a Schottky metal in the contact hole and annealing the metal to form a suicide interface to the second conductivity type region.
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