Semiconductor device having control electrodes with different impurity concentrations
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United States of America Patent
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Dec 10, 2002
Grant Date -
Sep 19, 2002
app pub date -
Aug 4, 1999
filing date -
Mar 5, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to a semiconductor device and a method of manufacturing the same, a trade-off relationship between threshold values and a diffusion layer leak is eliminated and it is not necessary to form gate oxide films at more than one stages. Since impurity dose are different from each other between gate electrodes (4A to 4C) of N-channel type MOS transistors (T41 to T43), impurity concentration in the gate electrodes (4A to 4C) are different from each other. The impurity concentration in the gate electrodes are progressively lower in the order of higher threshold values which are expected.
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