Critical dimension control improvement method for step and scan photolithography
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 10, 2002
Grant Date -
N/A
app pub date -
Jun 24, 1999
filing date -
Jun 24, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention provides a method and apparatus for reducing the variance of critical dimensions in a semiconductor device, by providing a method and apparatus for measuring lens and reticle error and then providing a method and apparatus for compensating for the error. The critical dimension of a die is measured and used to create a critical dimension function CD(x,y), where y is the direction of scan and x is perpendicular to the direction of scan, for a stepper scanner. CD(x,y) is used to determine the energy distribution E(x,y). E(x,y) is separated into orthogonal functions E(x) and E(y). Changes in the exposure energy or Gray filters or other means are used to compensate for the changes in E(x) and E(y).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully