Method to deposit a seeding layer for electroless copper plating
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United States of America Patent
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Dec 17, 2002
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app pub date -
Dec 7, 1998
filing date -
Dec 7, 1998
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Abstract
A method of for electroless copper deposition using a Pd/Pd acetate seeding layer formed in using only two components (Pd acetate and solvent) to form an interconnect for a semiconductor device. The invention has two preferred embodiments. The first embodiment forms a Key seed layer composed of Pd/Pd acetate by a spin-on or dip process for the electroless plating of a Cu plug. The second embodiment forms a Pd passivation cap layer over the Cu plug to prevent the Cu plug from oxidizing.
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