Cleaving process to fabricate multilayered substrates using low implantation doses
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United States of America Patent
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Dec 31, 2002
Grant Date -
N/A
app pub date -
Jul 27, 2000
filing date -
Aug 10, 1999
priority date (Note) -
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Abstract
A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.
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