Semiconductor device and semiconductor device manufacturing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 31, 2002
Grant Date -
Jan 31, 2002
app pub date -
Jul 16, 2001
filing date -
Jul 21, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiH.sub.n (CH.sub.3).sub.4-n : n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N.sub.2 O, H.sub.2 O, and CO.sub.2, and ammonia (NH.sub.3) to react.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully