Integrated semiconductor superlattice optical modulator
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United States of America Patent
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Dec 31, 2002
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N/A
app pub date -
Oct 25, 1999
filing date -
Oct 25, 1999
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Abstract
Devices and techniques for integrating a silicon superlattice optical modulator on a silicon substrate with other circuit elements. The superlattice structure is designed to convert the indirect bandgap structure of silicon into a direct bandgap structure to achieve more efficient optical absorption. The modulator can be fabricated based on a structure of a circuit element by using standard fabrication processes for silicon integrated circuits such as metal oxide semiconductor processing.
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