Three-dimensional (3D) programmable device
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United States of America Patent
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Dec 31, 2002
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N/A
app pub date -
Jun 30, 2000
filing date -
Jun 30, 2000
priority date (Note) -
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Abstract
A three-dimensional (3D) memory device having polysilicon diode isolation elements for chalcogenide memory cells and method for fabricating the same are described. The memory device includes a plurality of stacked memory cells to form a three-dimensional (3D) memory array. The memory device also includes a polysilicon diode isolation element to select a chalcogenide memory cell. The memory device is fabricated by forming a plurality of chalcogenide memory cells on a base insulator. The memory device is also fabricated by forming a polysilicon diode isolation element to select a chalcogenide memory cell.
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