Semiconductor structure
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United States of America Patent
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Dec 31, 2002
Grant Date -
N/A
app pub date -
Nov 15, 2000
filing date -
Nov 15, 2000
priority date (Note) -
Expired
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Abstract
A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A).sub.y (Ti.sub.x M.sub.1-x).sub.1-y O.sub.3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.
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