High-speed MOSFET structure for ESD protection
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United States of America Patent
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Dec 31, 2002
Grant Date -
N/A
app pub date -
Sep 16, 1997
filing date -
Sep 16, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A multi-gate-finger MOSFET structure positions the gate element over a channel between drain and source diffusion regions, such that the entire structure is within the active region in a substrate. The gate/channel-to-drain and gate/channel-to-source diffusion edges are effectively continuous along the gate/channel layout, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. In addition, multiple poly-gate extensions are incorporated to reduce the gate resistance, thereby minimizing the propagation delay of the gate signal.
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