Method for controlling deposition parameters based on polysilicon grain size feedback
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United States of America Patent
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Jan 28, 2003
Grant Date -
N/A
app pub date -
May 24, 2000
filing date -
May 24, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A processing line includes a deposition tool, a metrology tool and a controller. The deposition tool is adapted to form a polysilicon layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a grain size of the polysilicon layer. The controller is adapted to modify the recipe for subsequently formed polysilicon layers based on the measured grain size. A method for controlling a deposition process includes forming a polysilicon layer on a wafer in accordance with a recipe; measuring a grain size of the polysilicon layer; and changing the recipe for subsequently formed polysilicon layers based on the measured grain size.
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