Boron incorporated diffusion barrier material
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United States of America Patent
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Jan 28, 2003
Issued Date -
N/A
app pub date -
Dec 15, 2000
filing date -
Aug 24, 1999
priority date (Note) -
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Abstract
A diffusion barrier layer comprising TiN.sub.x B.sub.y is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiN.sub.x B.sub.y layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiN.sub.x B.sub.y layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers
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