Method for testing semiconductor devices

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United States of America Patent

PATENT NO 6512392
SERIAL NO

09738553

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Abstract

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Method for determining a more efficient quality assurance or reliability test screen without falsely rejecting, i.e., over stressing, short channel length devices during voltage stress test screening. Short channel lengths devices fabricated on a semiconductor wafer have a higher tendency to fail at voltage levels that would otherwise not harm long channel length devices. The failures, however, are not related to device defects. Protection to the more vulnerable devices is provided by determining the speed of the die prior to the voltage test screen, thus, segregating the devices based on operational speed performance. Next, a lower voltage is effetively applied during wafer probe test to the faster devices, which directly correspond to the population of short channel devices.

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Patent Owner(s)

Patent OwnerAddress
KYOEI SANGYO CO LTD20-4 SHOTO 2-CHOME SHIBUYA-KU TOKYO 150-0046
MITSUBISHI DENKI KAUSHIKI KAISHATOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fleury, Roger W Jericho, VT 4 83
Patrick, Jon A Jericho, VT 6 107

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