Thin-film transistor and fabrication method thereof
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United States of America Patent
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Feb 4, 2003
Grant Date -
N/A
app pub date -
May 18, 2000
filing date -
May 20, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A gate-insulating layer, intrinsic amorphous-silicon semiconductor layer, and ohmic contact layer are continuously formed so as to cover a gate electrode on a substrate to remove a natural oxide film from the surface of the ohmic contact layer by performing radio-frequency sputter etching before forming source and drain electrodes. After the natural oxide film is removed, a metallic layer mainly containing Al is formed on the gate-insulating layer and ohmic contact layer.
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