Low resistance gate flash memory
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United States of America Patent
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Feb 4, 2003
Issued Date -
N/A
app pub date -
Aug 8, 2001
filing date -
Jul 9, 1999
priority date (Note) -
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Abstract
Floating gate stacks having a metal control gate and a polysilicon floating gate and their methods of fabrication that are particularly useful for floating gate memory cells and apparatus produced therefrom. The metal control gate permits reduced gate resistance and gate height over polysilicon or silicide control gates. An oxidation barrier is formed on sidewalls of the metal control gate to protect it from oxidation during oxidation of sidewalls of the polysilicon floating gate. The oxidation barrier is useful in reducing peeling, stress and related oxidation problems when using metals such as tungsten in the metal control gate.
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