Semiconductor device manufacturing method having a porous insulating film
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United States of America Patent
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Feb 4, 2003
Grant Date -
N/A
app pub date -
Apr 12, 2000
filing date -
Feb 7, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.
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