Fabrication method for semiconductor integrated circuit device
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United States of America Patent
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-
Feb 4, 2003
Grant Date -
Nov 22, 2001
app pub date -
May 15, 2001
filing date -
May 17, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 .mu.m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.
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