Importance

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Abstract

According to one embodiment, a content addressable memory (CAM) can include at least one match line (404), series-coupled transistor pairs comprising match transistors (402-0 to 402-n) and switch devices (422-0 to 422-n), bit match indicator signals (406-0 to 406-n), mask cell value signals (412-0 to 412-n), a match line precharge limiting device (414), a match line precharge control device (416) and an amplifier circuit (432). This configuration can allow for the regulation of the match line (404) discharge path through a discharge control device (410) and a match indication feedback device (426). This, in turn, can allow for match line (404) precharging while at least one of the bit match indicator signals (406-0 to 406-n) is in an intermediate, or approximately half-VDD, level that is consistent with relatively low power precharging of the applied comparands. As such, the pseudo-VSS (408) line control may prevent a static current path from developing during the precharge scenario described above by directly controlling the path between the pseudo-VSS (408) line and the circuit ground supply.

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First Claim