Method of fabricating low dark current photodiode arrays
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 11, 2003
Grant Date -
Dec 19, 2002
app pub date -
Nov 14, 2001
filing date -
Jun 19, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating low dark current photodiodes is provided. A multi-layer epitaxial structure is provided, wherein a contact epilayer forms the top-most layer of the structure. A diffusion mask is deposited on top of the contact layer, and at least one hole formed therein. Dopant is diffused through the hole and into both the contact epilayer and the underlying epitaxial structure, forming a doped region. A contact mask is then deposited, covering both the diffusion mask and the holes formed therein. The contact mask and contact epilayer are selectively etched, forming contact mesas and exposing portions of the underlying layers. A passivation coating, also serving as an anti-reflective coating and having uniform thickness, is deposited on top of the contact mesa and the exposed portions. Contacts and bond pads are then deposited, forming a complete photodiode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully